Gallium-Arsenide (GaAs) Wafer
Zn-doped for semiconductor applications. Diameter: 50.8mm, Thickness 500?m (0,5mm) – One side optically polished one side fine ground. Comes with original wafer tray.
“Erbium(III) oxide 99,99% – Er2O3 – 10.0 grams” has been added to your cart. View cart

Element | As, Ga |
---|
Related products
-
Holmium(III)-Oxide 99,99% – Ho2O3 powder
€ 19,90 – € 1 320,00 Select options This product has multiple variants. The options may be chosen on the product page