Gallium-Arsenide (GaAs) Wafer
Zn-doped for semiconductor applications. Diameter: 50.8mm, Thickness 500?m (0,5mm) – One side optically polished one side fine ground. Comes with original wafer tray.
“Gadolinium(III)-Oxide 99,99% – Gd2O3 – 5.0 grams” has been added to your cart. View cart

Element | As, Ga |
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