Gallium-Arsenide (GaAs) Wafer Si doped – 2” (50.8mm) Dia.

Gallium-Arsenide (GaAs) Wafer
Zn-doped for semiconductor applications. Diameter: 50.8mm, Thickness 500?m (0,5mm) – One side optically polished one side fine ground. Comes with original wafer tray.