Gallium-Arsenid GaAs - Wafer - Si-dotiert - 1" (25,4mm) Durchmesser.

Gallium-Arsenid (GaAs)-Wafer

Si-doped for semiconductor applications. Diameter: 25.4mm, Thickness 500?m (0,5mm) – One side optically polished one side fine ground. Comes with original wafer tray.